| PART |
Description |
Maker |
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
| MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
| MB84VD21094 MB84VD21094-85-PBS MB84VD21094-85-PTS |
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Spansion Inc.
SPANSION LLC
|
| MX29LV160DTGBI-70G MX29LV160DBGBI-70G MX29LV160DBT |
Byte/Word mode switchable - 2,097,152 x8 / 1,048,576 x16
16M-BIT [2M x 8 / 1M x 16] 3V SUPPLY FLASH MEMORY
|
Macronix International
|
| MX29LV800CTXHC-90 MX29LV800CTXHC-90G MX29LV800CBXH |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PBGA48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO44
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电V时仅闪存
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO44
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PBGA48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AM29LV160DB-120EC AM29LV160DB-120EE AM29LV160DB-12 |
From old datasheet system
x8/x16 Flash EEPROM
16 Mbit (2 M x 8-Bit/1 M x 16-Bit)
x8/x16FlashEEPROM
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
